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MOSFETs

IQD020N10NM5CGSCATMA1

Trans MOSFET N-CH 100V 26A 9-Pin WHTFN EP T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Quad Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    20
  • Operating Junction Temperature (°C)
    -55 to 175
  • Maximum Continuous Drain Current (A)
    26
  • Maximum Drain-Source Resistance (mOhm)
    2.05@10V
  • Typical Gate Charge @ Vgs (nC)
    107@10V
  • Typical Gate Charge @ 10V (nC)
    107
  • Typical Input Capacitance @ Vds (pF)
    7300@50V
  • Maximum Power Dissipation (mW)
    3000
  • Typical Fall Time (ns)
    7
  • Typical Rise Time (ns)
    6
  • Typical Turn-Off Delay Time (ns)
    28
  • Typical Turn-On Delay Time (ns)
    15
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Mounting
    Surface Mount
  • Package Height
    0.7(Max)
  • Package Width
    6
  • Package Length
    5
  • PCB changed
    9
  • Supplier Package
    WHTFN EP
  • Pin Count
    9

Documentation and Resources

Datasheets
Design resources