Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
Category
Power MOSFET
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
600
Maximum Gate-Source Voltage (V)
20
Maximum Gate Threshold Voltage (V)
4
Maximum Continuous Drain Current (A)
50
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
40@10V
Typical Gate Charge @ Vgs (nC)
107@10V
Typical Gate Charge @ 10V (nC)
107
Typical Input Capacitance @ Vds (pF)
4340@400V
Maximum Power Dissipation (mW)
227000
Typical Fall Time (ns)
3.2
Typical Rise Time (ns)
8
Typical Turn-Off Delay Time (ns)
81
Typical Turn-On Delay Time (ns)
18
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
34@10V
Maximum Pulsed Drain Current @ TC=25°C (A)
211
Mounting
Through Hole
Package Height
21 mm
Package Width
5 mm
Package Length
15.8 mm
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4
Lead Shape
Through Hole