Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
600
Maximum Gate-Source Voltage (V)
20
Maximum Gate Threshold Voltage (V)
4.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
30
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
2
Maximum Drain-Source Resistance (mOhm)
125@10V
Typical Gate Charge @ Vgs (nC)
56@10V
Typical Gate Charge @ 10V (nC)
56
Typical Gate to Drain Charge (nC)
20
Typical Gate to Source Charge (nC)
16
Typical Reverse Recovery Charge (nC)
7000
Typical Input Capacitance @ Vds (pF)
2660@100V
Minimum Gate Threshold Voltage (V)
3.5
Typical Output Capacitance (pF)
110
Maximum Power Dissipation (mW)
219000
Typical Fall Time (ns)
5
Typical Rise Time (ns)
9
Typical Turn-Off Delay Time (ns)
44
Typical Turn-On Delay Time (ns)
14
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
113@10V
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
87
Typical Diode Forward Voltage (V)
0.9
Typical Gate Plateau Voltage (V)
6.1
Typical Reverse Recovery Time (ns)
385
Typical Gate Threshold Voltage (V)
4
Mounting
Through Hole
Package Height
21.1(Max) mm
Package Width
5.21(Max) mm
Package Length
16.3(Max) mm
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
3
Lead Shape
Through Hole