MOSFETs

IPW60R099P6XKSA1

Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  600

• Maximum Gate-Source Voltage (V)

  20

• Maximum Gate Threshold Voltage (V)

  4.5

• Maximum Continuous Drain Current (A)

  37.9

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  5

• Maximum Drain-Source Resistance (mOhm)

  99@10V

• Typical Gate Charge @ Vgs (nC)

  70@10V

• Typical Gate Charge @ 10V (nC)

  70

• Typical Input Capacitance @ Vds (pF)

  3330@100V

• Maximum Power Dissipation (mW)

  278000

• Typical Fall Time (ns)

  5

• Typical Rise Time (ns)

  10

• Typical Turn-Off Delay Time (ns)

  50

• Typical Turn-On Delay Time (ns)

  20

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Typical Drain-Source Resistance @ 25°C (mOhm)

  89@10V

• Mounting

  Through Hole

• Package Height

  21.1(Max) mm

• Package Width

  5.21(Max) mm

• Package Length

  16.3(Max) mm

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3

• Lead Shape

  Through Hole