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MOSFETs

IPT020N10N5ATMA1

Trans MOSFET N-CH 100V 31A 9-Pin(8+Tab) HSOF T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single Seven Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    3.8
  • Maximum Continuous Drain Current (A)
    31
  • Maximum Drain-Source Resistance (mOhm)
    2@10V
  • Typical Gate Charge @ Vgs (nC)
    122@10V
  • Typical Gate Charge @ 10V (nC)
    122
  • Typical Input Capacitance @ Vds (pF)
    8700@50V
  • Maximum Power Dissipation (mW)
    273000
  • Typical Fall Time (ns)
    17
  • Typical Rise Time (ns)
    13
  • Typical Turn-Off Delay Time (ns)
    49
  • Typical Turn-On Delay Time (ns)
    20
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    1.6@10V|2@6V
  • Mounting
    Surface Mount
  • Package Height
    2.4(Max)
  • Package Width
    10.58(Max)
  • Package Length
    10.1(Max)
  • PCB changed
    8
  • Tab
    Tab
  • Standard Package Name
    SO
  • Supplier Package
    HSOF
  • Pin Count
    9

Documentation and Resources

Datasheets
Design resources