MOSFETs

IPS65R650CEAKMA1

Trans MOSFET N-CH 650V 10.1A 3-Pin(3+Tab) TO-251 Tube

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Obsolete

• HTS

  COMPONENTS

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  650

• Maximum Gate-Source Voltage (V)

  20

• Maximum Gate Threshold Voltage (V)

  3.5

• Maximum Continuous Drain Current (A)

  10.1

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  650@10V

• Typical Gate Charge @ Vgs (nC)

  23@10V

• Typical Gate Charge @ 10V (nC)

  23

• Typical Gate to Drain Charge (nC)

  12

• Typical Input Capacitance @ Vds (pF)

  440@100V

• Maximum Power Dissipation (mW)

  86000

• Typical Fall Time (ns)

  11

• Typical Rise Time (ns)

  8

• Typical Turn-Off Delay Time (ns)

  64

• Typical Turn-On Delay Time (ns)

  10

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Typical Drain-Source Resistance @ 25°C (mOhm)

  540@10V

• Maximum Pulsed Drain Current @ TC=25°C (A)

  18

• Mounting

  Through Hole

• Package Height

  6.22 mm

• Package Width

  2.3 mm

• Package Length

  6.5 mm

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-251

• Pin Count

  3