MOSFETs

IPN60R360PFD7SATMA1

600V CoolMOS™ PFD7 superjunction MOSFET in SOT-223 package

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  600

• Maximum Gate-Source Voltage (V)

  20

• Maximum Gate Threshold Voltage (V)

  4.5

• Operating Junction Temperature (°C)

  -40 to 150

• Maximum Continuous Drain Current (A)

  10

• Maximum Drain-Source Resistance (mOhm)

  360@10V

• Typical Gate Charge @ Vgs (nC)

  12.7@10V

• Typical Gate Charge @ 10V (nC)

  12.7

• Typical Input Capacitance @ Vds (pF)

  534@400V

• Maximum Power Dissipation (mW)

  7000

• Typical Fall Time (ns)

  13

• Typical Rise Time (ns)

  11

• Typical Turn-Off Delay Time (ns)

  46

• Typical Turn-On Delay Time (ns)

  13.5

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Maximum Pulsed Drain Current @ TC=25°C (A)

  24

• Mounting

  Surface Mount

• Package Height

  1.6

• Package Width

  3.5

• Package Length

  6.5

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  SOT

• Supplier Package

  SOT-223

• Pin Count

  3