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IPLK60R600PFD7ATMA1|INFINEON|simage
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MOSFETs

IPLK60R600PFD7ATMA1

Trans MOSFET N-CH 600V 7A 8-Pin Thin-PAK EP T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    20
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    7
  • Maximum Drain-Source Resistance (mOhm)
    600@10V
  • Typical Gate Charge @ Vgs (nC)
    8.5@10V
  • Typical Gate Charge @ 10V (nC)
    8.5
  • Typical Input Capacitance @ Vds (pF)
    344@400V
  • Maximum Power Dissipation (mW)
    45000
  • Typical Fall Time (ns)
    23
  • Typical Rise Time (ns)
    10
  • Typical Turn-Off Delay Time (ns)
    43.5
  • Typical Turn-On Delay Time (ns)
    9.2
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.1(Max)
  • Package Width
    6.1(Max)
  • Package Length
    5.35(Max)
  • PCB changed
    8
  • Supplier Package
    Thin-PAK EP
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources