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MOSFETs

IPL60R360P6SATMA1

Trans MOSFET N-CH 600V 11.3A 8-Pin Thin-PAK EP T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    4.5
  • Maximum Continuous Drain Current (A)
    11.3
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    360@10V
  • Typical Gate Charge @ Vgs (nC)
    22@10V
  • Typical Gate Charge @ 10V (nC)
    22
  • Typical Input Capacitance @ Vds (pF)
    1010@100V
  • Maximum Power Dissipation (mW)
    89300
  • Typical Fall Time (ns)
    7
  • Typical Rise Time (ns)
    7
  • Typical Turn-Off Delay Time (ns)
    33
  • Typical Turn-On Delay Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    320@10V
  • Mounting
    Surface Mount
  • Package Width
    6 mm
  • Package Length
    5 mm
  • PCB changed
    8
  • Supplier Package
    Thin-PAK EP
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources