MOSFETs

IPG20N06S4L14ATMA2

Trans MOSFET N-CH 60V 20A 8-Pin TDSON EP T/R Automotive AEC-Q101

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Dual Dual Drain

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±16

• Maximum Gate Threshold Voltage (V)

  2.2

• Maximum Continuous Drain Current (A)

  20

• Maximum Drain-Source Resistance (mOhm)

  13.7@10V

• Typical Gate Charge @ Vgs (nC)

  30@10V

• Typical Gate Charge @ 10V (nC)

  30

• Typical Input Capacitance @ Vds (pF)

  2220@25V

• Maximum Power Dissipation (mW)

  50000

• Typical Fall Time (ns)

  15

• Typical Rise Time (ns)

  2

• Typical Turn-Off Delay Time (ns)

  40

• Typical Turn-On Delay Time (ns)

  8

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  11.6@10V|16@4.5V

• Mounting

  Surface Mount

• Package Height

  1 mm

• Package Width

  5.9 mm

• Package Length

  5.15 mm

• PCB changed

  8

• Standard Package Name

  SON

• Supplier Package

  TDSON EP

• Pin Count

  8

• Lead Shape

  No Lead