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MOSFETs

IPDD60R102G7XTMA1

Trans MOSFET N-CH 600V 23A 10-Pin HDSOP EP T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quint Drain Quad Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    23
  • Maximum Drain-Source Resistance (mOhm)
    102@10V
  • Typical Gate Charge @ Vgs (nC)
    34@10V
  • Typical Gate Charge @ 10V (nC)
    34
  • Typical Gate to Drain Charge (nC)
    12
  • Typical Input Capacitance @ Vds (pF)
    1320@400V
  • Maximum Power Dissipation (mW)
    139000
  • Typical Fall Time (ns)
    4
  • Typical Rise Time (ns)
    5
  • Typical Turn-Off Delay Time (ns)
    60
  • Typical Turn-On Delay Time (ns)
    18
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    88@10V
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    66
  • Mounting
    Surface Mount
  • Package Height
    2.3 mm
  • Package Width
    15.4 mm
  • Package Length
    6.5 mm
  • PCB changed
    10
  • Standard Package Name
    SO
  • Supplier Package
    HDSOP EP
  • Pin Count
    10

Documentation and Resources

Datasheets
Design resources