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IPD60R2K0PFD7SAUMA1|INFINEON|simage
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MOSFETs

IPD60R2K0PFD7SAUMA1

Trans MOSFET N-CH 600V 3A 3-Pin(2+Tab) TO-252 T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    LTB
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Process Technology
    CoolMOS
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Gate Threshold Voltage (V)
    4.5
  • Operating Junction Temperature (°C)
    -40 to 150
  • Maximum Continuous Drain Current (A)
    3
  • Maximum Drain-Source Resistance (mOhm)
    2000@10V
  • Typical Gate Charge @ Vgs (nC)
    3.8@10V
  • Typical Gate Charge @ 10V (nC)
    3.8
  • Typical Input Capacitance @ Vds (pF)
    134@400V
  • Maximum Power Dissipation (mW)
    20000
  • Typical Fall Time (ns)
    105
  • Typical Rise Time (ns)
    7.2
  • Typical Turn-Off Delay Time (ns)
    41
  • Typical Turn-On Delay Time (ns)
    5.5
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.3 mm
  • Package Width
    6.1 mm
  • Package Length
    6.6 mm
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-252
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources