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IPD60R1K5PFD7SAUMA1|INFINEON|simage
IPD60R1K5PFD7SAUMA1|INFINEON|limage
MOSFETs

IPD60R1K5PFD7SAUMA1

Trans MOSFET N-CH 600V 3.6A 3-Pin(2+Tab) DPAK T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    20
  • Operating Junction Temperature (°C)
    -40 to 150
  • Maximum Continuous Drain Current (A)
    3.6
  • Maximum Drain-Source Resistance (mOhm)
    1500@10V
  • Typical Gate Charge @ Vgs (nC)
    4.6@10V
  • Typical Gate Charge @ 10V (nC)
    4.6
  • Typical Input Capacitance @ Vds (pF)
    169@400V
  • Maximum Power Dissipation (mW)
    22000
  • Typical Fall Time (ns)
    75
  • Typical Rise Time (ns)
    8
  • Typical Turn-Off Delay Time (ns)
    41.5
  • Typical Turn-On Delay Time (ns)
    6.4
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.3 mm
  • Package Width
    6.1 mm
  • Package Length
    6.6 mm
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources