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IPB60R210CFD7ATMA1|INFINEON|simage
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MOSFETs

IPB60R210CFD7ATMA1

Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) D2PAK T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    LTB
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    20
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    12
  • Maximum Drain-Source Resistance (mOhm)
    210@10V
  • Typical Gate Charge @ Vgs (nC)
    23@10V
  • Typical Gate Charge @ 10V (nC)
    23
  • Typical Input Capacitance @ Vds (pF)
    1015@400V
  • Maximum Power Dissipation (mW)
    64000
  • Typical Fall Time (ns)
    7.5
  • Typical Rise Time (ns)
    16.5
  • Typical Turn-Off Delay Time (ns)
    54
  • Typical Turn-On Delay Time (ns)
    22
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    4.4 mm
  • Package Width
    9.25 mm
  • Package Length
    10 mm
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources