Infineon Technologies AGIPB320N20N3GATMA1MOSFETs
Trans MOSFET N-CH 200V 34A 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| IPB320N20N3GATMA1 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Power MOSFET | |
| Single | |
| Enhancement | |
| N | |
| 1 | |
| 200 | |
| ±20 | |
| 4 | |
| -55 to 175 | |
| 34 | |
| 100 | |
| 1 | |
| 32@10V | |
| 22@10V | |
| 22 | |
| 3 | |
| 8 | |
| 500 | |
| 5 | |
| 1770@100V | |
| 4@100V | |
| 2 | |
| 135 | |
| 136000 | |
| 4 | |
| 9 | |
| 21 | |
| 11 | |
| -55 | |
| 175 | |
| Tape and Reel | |
| 28@10V | |
| 136 | |
| 40 | |
| 0.9 | |
| 4.4 | |
| 110 | |
| 1.2 | |
| 3 | |
| 20 | |
| Mounting | Surface Mount |
| Package Height | 4.4 mm |
| Package Width | 9.25 mm |
| Package Length | 10 mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
In addition to amplifying electronic signals, you'll be able to switch between various lines with the IPB320N20N3GATMA1 power MOSFET, developed by Infineon Technologies. Its maximum power dissipation is 136000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This device is made with optimos technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| EDA / CAD Models |
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