MOSFETs
IPAW60R180P7SXKSA1
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
Infineon Technologies AGProduct Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
LTB
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
600
Maximum Gate-Source Voltage (V)
20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
18
Maximum Gate-Source Leakage Current (nA)
1000
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
180@10V
Typical Gate Charge @ Vgs (nC)
25@10V
Typical Gate Charge @ 10V (nC)
25
Typical Gate to Drain Charge (nC)
8@10V
Typical Gate to Source Charge (nC)
6
Typical Reverse Recovery Charge (nC)
1300
Typical Input Capacitance @ Vds (pF)
1081@400V
Typical Reverse Transfer Capacitance @ Vds (pF)
36@400V
Minimum Gate Threshold Voltage (V)
3
Typical Output Capacitance (pF)
19
Maximum Power Dissipation (mW)
26000
Typical Fall Time (ns)
8
Typical Rise Time (ns)
12
Typical Turn-Off Delay Time (ns)
85
Typical Turn-On Delay Time (ns)
14
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
145@10V
Maximum Pulsed Drain Current @ TC=25°C (A)
53
Typical Diode Forward Voltage (V)
0.9
Typical Gate Plateau Voltage (V)
5.2
Typical Reverse Recovery Time (ns)
175
Typical Gate Threshold Voltage (V)
3.5
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Through Hole
Package Height
16.27(Max) mm
Package Width
4.9(Max) mm
Package Length
11.3(Max) mm
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220FP
Pin Count
3
Lead Shape
Through Hole