IGBT Chip

IKW50N65WR5XKSA1

Trans IGBT Chip N-CH 650V 80A 282W 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Technology

  Trench Stop 5

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  650

• Typical Collector-Emitter Saturation Voltage (V)

  1.4

• Maximum Continuous DC Collector Current (A)

  80

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Maximum Power Dissipation (mW)

  282

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  20.95 mm

• Package Width

  5.02 mm

• Package Length

  15.94 mm

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-247

• Pin Count

  3

• Lead Shape

  Through Hole