Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Obsolete
HTS
HUF76609D3ST
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Process Technology
0.18um to 2um
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±16
Maximum Gate Threshold Voltage (V)
3
Maximum Continuous Drain Current (A)
10
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
160@10V
Typical Gate Charge @ Vgs (nC)
13@10V
Typical Gate Charge @ 10V (nC)
13
Typical Input Capacitance @ Vds (pF)
425@25V
Maximum Power Dissipation (mW)
49000
Typical Fall Time (ns)
28|39
Typical Rise Time (ns)
41|18
Typical Turn-Off Delay Time (ns)
30|55
Typical Turn-On Delay Time (ns)
6|10
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
2.29
Package Width
6.1
Package Length
6.54
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
DPAK
Pin Count
3
Lead Shape
Gull-wing