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HUF75639P3|ONSEMI|simage
HUF75639P3|ONSEMI|limage
MOSFETs

HUF75639P3

Trans MOSFET N-CH Si 100V 56A 3-Pin(3+Tab) TO-220 Tube

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    56
  • Maximum Drain-Source Resistance (mOhm)
    25@10V
  • Typical Gate Charge @ Vgs (nC)
    110@20V
  • Typical Gate Charge @ 10V (nC)
    57
  • Typical Input Capacitance @ Vds (pF)
    2000@25V
  • Maximum Power Dissipation (mW)
    200000
  • Typical Fall Time (ns)
    25
  • Typical Rise Time (ns)
    60
  • Typical Turn-Off Delay Time (ns)
    20
  • Typical Turn-On Delay Time (ns)
    15
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    9.4(Max)
  • Package Width
    4.7(Max)
  • Package Length
    10.67(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-220
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources