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FS13MR12W2M1HPB11BPSA1|INFINEON|simage
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MOSFETs

FS13MR12W2M1HPB11BPSA1

Trans MOSFET N-CH SiC 1.2KV 50A 38-Pin Tray

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    SiC
  • Configuration
    Hex
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    6
  • Maximum Drain-Source Voltage (V)
    1200
  • Maximum Gate-Source Voltage (V)
    20
  • Operating Junction Temperature (°C)
    -40 to 175
  • Maximum Continuous Drain Current (A)
    50
  • Maximum Drain-Source Resistance (mOhm)
    11.7(Typ)@18V
  • Typical Gate Charge @ Vgs (nC)
    200@18V
  • Typical Input Capacitance @ Vds (pF)
    6050@800V
  • Typical Fall Time (ns)
    34
  • Typical Rise Time (ns)
    15
  • Typical Turn-Off Delay Time (ns)
    114
  • Typical Turn-On Delay Time (ns)
    58
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tray
  • Mounting
    Screw
  • Package Height
    12 mm
  • Package Width
    56.7 mm
  • Package Length
    62.8 mm
  • PCB changed
    38
  • Pin Count
    38

Documentation and Resources

Datasheets
Design resources