IGBT Modules

FP75R12KT4B11BOSA1

Trans IGBT Module N-CH 1200V 75A 385W 35-Pin ECONO3-3 Tray

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  COMPONENTS

• Automotive

  No

• PPAP

  No

• Technology

  Field Stop|Trench

• Channel Type

  N

• Configuration

  Hex

• Typical Collector-Emitter Saturation Voltage (V)

  1.85

• Maximum Collector-Emitter Voltage (V)

  1200

• Maximum Power Dissipation (mW)

  385

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Continuous DC Collector Current (A)

  75

• Maximum Gate Emitter Leakage Current (uA)

  0.1

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tray

• Mounting

  Screw

• Package Height

  17

• Package Width

  62

• Package Length

  122

• PCB changed

  35

• Supplier Package

  ECONO3-3

• Pin Count

  35