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FJD5553TM|ONSEMI|simage
FJD5553TM|ONSEMI|limage
GP BJT

FJD5553TM

Trans GP BJT NPN 400V 3A 1250mW 3-Pin(2+Tab) DPAK T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Category
    Bipolar Power
  • Material
    Si
  • Configuration
    Single
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    1050
  • Maximum Collector-Emitter Voltage (V)
    400
  • Maximum Base-Emitter Voltage (V)
    14
  • Maximum Base-Emitter Saturation Voltage (V)
    1.2@0.2A@1A
  • Maximum Collector-Emitter Saturation Voltage (V)
    0.5@0.2A@1A
  • Maximum DC Collector Current (A)
    3
  • Minimum DC Current Gain
    30@0.4A@3V|10@10mA@5V
  • Maximum Power Dissipation (mW)
    1250
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.29 mm
  • Package Width
    6.1 mm
  • Package Length
    6.54 mm
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources