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FDY1002PZ|ONSEMI|limage
FDY1002PZ|ONSEMI|simage
MOSFETs

FDY1002PZ

Trans MOSFET P-CH 20V 0.83A 6-Pin SOT-563 T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Dual
  • Process Technology
    0.35um to 2um
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Continuous Drain Current (A)
    0.83
  • Maximum Drain-Source Resistance (mOhm)
    500@4.5V
  • Typical Gate Charge @ Vgs (nC)
    2.2@4.5V
  • Typical Gate Charge @ 10V (nC)
    2.2
  • Typical Input Capacitance @ Vds (pF)
    100@10V
  • Maximum Power Dissipation (mW)
    625
  • Typical Fall Time (ns)
    13
  • Typical Rise Time (ns)
    2.9
  • Typical Turn-Off Delay Time (ns)
    23
  • Typical Turn-On Delay Time (ns)
    3.5
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.6(Max) mm
  • Package Width
    1.3(Max) mm
  • Package Length
    1.7(Max) mm
  • PCB changed
    6
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-563
  • Pin Count
    6
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources