The ON Semiconductor MOSFET has been designed especially for low voltage applications as a replacement for digital transistors. The maximum Drain Source Voltage of the product is 25 V and Gate Source Voltage is 8V. Its maximum power dissipation is 350 mW. It has 1 number of elements per chip. This MOSFET has an operating temperature range of -55°C to 150°C.
Features and Benefits:
• 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 W @ VGS= 2.7 V RDS(ON) = 4 W @ VGS= 4.5 V
• Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.06V
• Gate-Source Zener for ESD ruggedness. >6kV Human Body Model
• Replace multiple NPN digital transistors with one DMOS FET.
Application:
• FDV301N is a Digital MOSFET which can be trigger ON by applying voltages as low as 2.0V to its gate. With that being the case the device can be used in all low voltage digital circuits.
• FDV301N can also be as a high speed switching device replacing all conventional transistors in digital circuits since it is specifically designed for high speed switching applications.
• The device had very low turn ON resistance which is a must condition in some applications.
• The device is also preferred for high efficiency application as the low drop during switching leads to less power loss and with less power loss the efficiency of the system will be more.
Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Process Technology
DMOS
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
25
Maximum Gate-Source Voltage (V)
8
Maximum Gate Threshold Voltage (V)
1.06
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
0.22
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
4000@4.5V
Typical Gate Charge @ Vgs (nC)
0.49@4.5V
Typical Gate Charge @ 10V (nC)
0.49
Typical Gate to Drain Charge (nC)
0.07
Typical Gate to Source Charge (nC)
0.22
Typical Input Capacitance @ Vds (pF)
9.5@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
1.3@10V
Minimum Gate Threshold Voltage (V)
0.7
Typical Output Capacitance (pF)
6
Maximum Power Dissipation (mW)
350
Typical Fall Time (ns)
3.5
Typical Rise Time (ns)
6
Typical Turn-Off Delay Time (ns)
3.5
Typical Turn-On Delay Time (ns)
3.2
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
3100@4.5V|3800@2.7
Typical Diode Forward Voltage (V)
0.8
Typical Gate Plateau Voltage (V)
2.1
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
0.85
Maximum Positive Gate-Source Voltage (V)
8
Mounting
Surface Mount
Package Height
0.94
Package Width
1.3
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23
Pin Count
3
Lead Shape
Gull-wing