Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
20
Maximum Gate-Source Voltage (V)
±12
Maximum Gate Threshold Voltage (V)
1.5
Maximum Continuous Drain Current (A)
9.4
Maximum Drain-Source Resistance (mOhm)
14@4.5V
Typical Gate Charge @ Vgs (nC)
16@4.5V
Typical Gate Charge @ 10V (nC)
16
Typical Gate to Drain Charge (nC)
4
Typical Gate to Source Charge (nC)
3
Typical Input Capacitance @ Vds (pF)
1821@10V
Typical Output Capacitance (pF)
440
Maximum Power Dissipation (mW)
2000
Typical Fall Time (ns)
16
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
34
Typical Turn-On Delay Time (ns)
10
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
10@4.5V|13@2.5V
Mounting
Surface Mount
Package Height
1.5(Max) mm
Package Width
3.9 mm
Package Length
4.9 mm
PCB changed
8
Standard Package Name
SO
Supplier Package
SOIC
Pin Count
8
Lead Shape
Gull-wing