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FDS5670|ONSEMI|simage
FDS5670|ONSEMI|limage
MOSFETs

FDS5670

Trans MOSFET N-CH 60V 10A 8-Pin SOIC T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Process Technology
    0.18um to 2um
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    10
  • Maximum Drain-Source Resistance (mOhm)
    14@10V
  • Typical Gate Charge @ Vgs (nC)
    49@10V
  • Typical Gate Charge @ 10V (nC)
    49
  • Typical Input Capacitance @ Vds (pF)
    2900@15V
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    23
  • Typical Rise Time (ns)
    10
  • Typical Turn-Off Delay Time (ns)
    50
  • Typical Turn-On Delay Time (ns)
    16
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.5(Max) mm
  • Package Width
    3.9 mm
  • Package Length
    4.9 mm
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOIC
  • Pin Count
    8
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources