Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
COMPONENTS
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Triple Source
Process Technology
0.35um to 2um
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.5
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
10.5
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
14.3@10V
Typical Gate Charge @ Vgs (nC)
7@4.5V|14@10V
Typical Gate Charge @ 10V (nC)
14
Typical Gate to Drain Charge (nC)
2.8
Typical Gate to Source Charge (nC)
2.3
Typical Reverse Recovery Charge (nC)
4.4
Typical Input Capacitance @ Vds (pF)
710@15V
Typical Reverse Transfer Capacitance @ Vds (pF)
90@15V
Minimum Gate Threshold Voltage (V)
1.2
Typical Output Capacitance (pF)
140
Maximum Power Dissipation (mW)
2300
Typical Fall Time (ns)
2
Typical Rise Time (ns)
3
Typical Turn-Off Delay Time (ns)
17
Typical Turn-On Delay Time (ns)
7
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Maximum Pulsed Drain Current @ TC=25°C (A)
40
Typical Diode Forward Voltage (V)
0.88
Typical Reverse Recovery Time (ns)
16
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
1.9
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
0.75(Max)
Package Width
3
Package Length
3.2
PCB changed
8
Standard Package Name
DFN
Supplier Package
WDFN EP
Pin Count
8