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FDH50N50F133|ONSEMI|simage
FDH50N50F133|ONSEMI|limage
MOSFETs

FDH50N50-F133

Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-247 Tube

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    FDH50N50-F133
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    500
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    5
  • Maximum Continuous Drain Current (A)
    48
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    25
  • Maximum Drain-Source Resistance (mOhm)
    105@10V
  • Typical Gate Charge @ Vgs (nC)
    105@10V
  • Typical Gate Charge @ 10V (nC)
    105
  • Typical Input Capacitance @ Vds (pF)
    4979@25V
  • Maximum Power Dissipation (mW)
    625000
  • Typical Fall Time (ns)
    230
  • Typical Rise Time (ns)
    360
  • Typical Turn-Off Delay Time (ns)
    225
  • Typical Turn-On Delay Time (ns)
    105
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    20.57
  • Package Width
    4.7
  • Package Length
    15.62
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-247
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources