IGBT Modules

FD200R12KE3HOSA1

Trans IGBT Module N-CH 1200V 295A 1050W 5-Pin 62MM-1 Tray

Infineon Technologies AG

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Channel Type

  N

• Configuration

  Single

• Typical Collector-Emitter Saturation Voltage (V)

  1.7

• Maximum Collector-Emitter Voltage (V)

  1200

• Maximum Power Dissipation (mW)

  1050

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Continuous DC Collector Current (A)

  295

• Maximum Gate Emitter Leakage Current (uA)

  0.4

• Minimum Operating Temperature (°C)

  -40

• Maximum Operating Temperature (°C)

  125

• Packaging

  Tray

• Mounting

  Screw

• Package Height

  29 mm

• Package Width

  61.4 mm

• Package Length

  106.4 mm

• PCB changed

  5

• Supplier Package

  62MM-1

• Pin Count

  5