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FCPF850N80Z|ONSEMI|simage
FCPF850N80Z|ONSEMI|limage
MOSFETs

FCPF850N80Z

Trans MOSFET N-CH 800V 6A 3-Pin(3+Tab) TO-220FP Tube

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    800
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4.5
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    6
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    25
  • Maximum Drain-Source Resistance (mOhm)
    850@10V
  • Typical Gate Charge @ Vgs (nC)
    22@10V
  • Typical Gate Charge @ 10V (nC)
    22
  • Typical Input Capacitance @ Vds (pF)
    990@100V
  • Maximum Power Dissipation (mW)
    28400
  • Typical Fall Time (ns)
    4.5
  • Typical Rise Time (ns)
    10
  • Typical Turn-Off Delay Time (ns)
    40
  • Typical Turn-On Delay Time (ns)
    16
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tube
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Maximum Diode Forward Voltage (V)
    1.2
  • Mounting
    Through Hole
  • Package Height
    15.87 mm
  • Package Width
    4.7 mm
  • Package Length
    10.16 mm
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-220FP
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources