Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single Dual Source
Process Technology
0.18um to 2um
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
4.5
Maximum Continuous Drain Current (A)
75
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
23@10V
Typical Gate Charge @ Vgs (nC)
222@10V
Typical Gate Charge @ 10V (nC)
222
Typical Input Capacitance @ Vds (pF)
7160@400V
Maximum Power Dissipation (mW)
595000
Typical Fall Time (ns)
7
Typical Rise Time (ns)
30
Typical Turn-Off Delay Time (ns)
130
Typical Turn-On Delay Time (ns)
43
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tube
Mounting
Through Hole
Package Height
22.54
Package Width
5
Package Length
15.6
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4
Lead Shape
Through Hole