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F3L200R12N2H3B47BPSA2|INFINEON|simage
F3L200R12N2H3B47BPSA2|INFINEON|limage
IGBT Modules

F3L200R12N2H3B47BPSA2

Trans IGBT Module N-CH 1200V 200A 23-Pin ECONO2B Tray

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Channel Type
    N
  • Configuration
    Quad
  • Typical Collector-Emitter Saturation Voltage (V)
    1.8
  • Maximum Collector-Emitter Voltage (V)
    1200
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Maximum Continuous DC Collector Current (A)
    200
  • Maximum Gate Emitter Leakage Current (uA)
    0.1
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Screw
  • Package Height
    17
  • Package Width
    45
  • Package Length
    107.5
  • PCB changed
    23
  • Supplier Package
    ECONO2B
  • Pin Count
    23

Documentation and Resources

Datasheets
Design resources