Arrow Electronic Components Online
EFC3J018NUZTDG|ONSEMI|simage
EFC3J018NUZTDG|ONSEMI|limage
MOSFETs

EFC3J018NUZTDG

Trans MOSFET N-CH 20V 23A 6-Pin WLCSP T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Dual Common Drain Dual Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±10
  • Maximum Gate Threshold Voltage (V)
    1.3
  • Maximum Continuous Drain Current (A)
    23
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum Drain-Source Resistance (mOhm)
    4.7@4.5V
  • Typical Gate Charge @ Vgs (nC)
    75@4.5V
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    2800
  • Typical Rise Time (ns)
    890
  • Typical Turn-Off Delay Time (ns)
    4100
  • Typical Turn-On Delay Time (ns)
    280
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.15(Max)
  • Package Width
    1.77
  • Package Length
    3.05
  • PCB changed
    6
  • Standard Package Name
    CSP
  • Supplier Package
    WLCSP
  • Pin Count
    6
  • Lead Shape
    Ball

Documentation and Resources

Datasheets
Design resources