Arrow Electronic Components Online
DN2535N5G|MICROCHP|simage
DN2535N5G|MICROCHP|limage
MOSFETs

DN2535N5-G

Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Depletion
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    350
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    0.5
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum Drain-Source Resistance (mOhm)
    25000@0V
  • Typical Input Capacitance @ Vds (pF)
    200@25V
  • Maximum Power Dissipation (mW)
    15000
  • Typical Fall Time (ns)
    20(Max)
  • Typical Rise Time (ns)
    15(Max)
  • Typical Turn-Off Delay Time (ns)
    15(Max)
  • Typical Turn-On Delay Time (ns)
    10(Max)
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    9.02(Max)
  • Package Width
    4.83(Max)
  • Package Length
    10.67(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-220
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources