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DMTH6010LPD13|DIODEZTX|simage
DMTH6010LPD13|DIODEZTX|limage
MOSFETs

DMTH6010LPD-13

Trans MOSFET N-CH 60V 13.1A 8-Pin PowerDI EP T/R

Diodes Incorporated
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Dual Dual Drain
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    3
  • Maximum Continuous Drain Current (A)
    13.1
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    11@10V
  • Typical Gate Charge @ Vgs (nC)
    20.3@4.5V|40.2@10V
  • Typical Gate Charge @ 10V (nC)
    40.2
  • Typical Input Capacitance @ Vds (pF)
    2615@30V
  • Maximum Power Dissipation (mW)
    2800
  • Typical Fall Time (ns)
    7.4
  • Typical Rise Time (ns)
    8.8
  • Typical Turn-Off Delay Time (ns)
    20.8
  • Typical Turn-On Delay Time (ns)
    5.7
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.98
  • Package Width
    5.8
  • Package Length
    4.9
  • PCB changed
    8
  • Supplier Package
    PowerDI EP
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources