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CSD25485F5T|TI|simage
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MOSFETs

CSD25485F5T

Trans MOSFET P-CH 20V 5.3A 3-Pin PicoStar T/R

Texas Instruments

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.95
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    -12
  • Maximum Gate Threshold Voltage (V)
    1.3
  • Maximum Continuous Drain Current (A)
    5.3
  • Maximum Gate-Source Leakage Current (nA)
    25
  • Maximum IDSS (uA)
    0.1
  • Maximum Drain-Source Resistance (mOhm)
    35@8V
  • Typical Gate Charge @ Vgs (nC)
    2.7@4.5V
  • Typical Gate to Drain Charge (nC)
    0.56
  • Typical Gate to Source Charge (nC)
    0.67
  • Typical Input Capacitance @ Vds (pF)
    410@10V
  • Maximum Power Dissipation (mW)
    1400
  • Typical Fall Time (ns)
    14
  • Typical Rise Time (ns)
    6
  • Typical Turn-Off Delay Time (ns)
    27
  • Typical Turn-On Delay Time (ns)
    14
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Gate Threshold Voltage (V)
    0.95
  • Mounting
    Surface Mount
  • Package Height
    0.35(Max)
  • Package Width
    0.77(Max)
  • Package Length
    1.53(Max)
  • PCB changed
    3
  • Supplier Package
    PicoStar
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources