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CSD25483F4T|TI|simage
CSD25483F4T|TI|limage
MOSFETs

CSD25483F4T

Trans MOSFET P-CH 20V 1.6A 3-Pin PicoStar T/R

Texas Instruments

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    -12
  • Maximum Gate Threshold Voltage (V)
    1.2
  • Maximum Continuous Drain Current (A)
    1.6
  • Maximum Gate-Source Leakage Current (nA)
    50
  • Maximum IDSS (uA)
    0.1
  • Maximum Drain-Source Resistance (mOhm)
    205@8V
  • Typical Gate Charge @ Vgs (nC)
    0.959@4.5V
  • Typical Gate to Drain Charge (nC)
    0.16
  • Typical Input Capacitance @ Vds (pF)
    198@10V
  • Maximum Power Dissipation (mW)
    500
  • Typical Fall Time (ns)
    7
  • Typical Rise Time (ns)
    3.7
  • Typical Turn-Off Delay Time (ns)
    17.4
  • Typical Turn-On Delay Time (ns)
    4.3
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Gate Threshold Voltage (V)
    0.95
  • Mounting
    Surface Mount
  • Package Height
    0.35(Max)
  • Package Width
    1.04(Max)
  • Package Length
    0.64(Max)
  • PCB changed
    3
  • Supplier Package
    PicoStar
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources