Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.4
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
100
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
16.5@10V
Typical Gate Charge @ Vgs (nC)
17.1@10V
Typical Gate Charge @ 10V (nC)
17.1
Typical Gate to Drain Charge (nC)
3.2
Typical Gate to Source Charge (nC)
5.1
Typical Reverse Recovery Charge (nC)
195
Typical Input Capacitance @ Vds (pF)
1290@50V
Typical Reverse Transfer Capacitance @ Vds (pF)
5.7@50V
Minimum Gate Threshold Voltage (V)
2.4
Typical Output Capacitance (pF)
257
Maximum Power Dissipation (mW)
118000
Typical Fall Time (ns)
1
Typical Rise Time (ns)
2
Typical Turn-Off Delay Time (ns)
9
Typical Turn-On Delay Time (ns)
6
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
13.7@10V|16.3@6V
Maximum Pulsed Drain Current @ TC=25°C (A)
138
Typical Diode Forward Voltage (V)
0.9
Typical Gate Plateau Voltage (V)
4.5
Typical Reverse Recovery Time (ns)
72
Maximum Diode Forward Voltage (V)
1.1
Typical Gate Threshold Voltage (V)
2.8
Maximum Gate Resistance (Ohm)
2.2
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Through Hole
Package Height
9.15
Package Width
4.55
Package Length
10.16
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220
Pin Count
3