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MOSFETs

CSD19531Q5AT

Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R

Texas Instruments

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.95
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    3.3
  • Maximum Continuous Drain Current (A)
    100
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    6.4@10V
  • Typical Gate Charge @ Vgs (nC)
    37@10V
  • Typical Gate Charge @ 10V (nC)
    37
  • Typical Gate to Drain Charge (nC)
    6.6
  • Typical Input Capacitance @ Vds (pF)
    2980@50V
  • Maximum Power Dissipation (mW)
    3300
  • Typical Fall Time (ns)
    5.2
  • Typical Rise Time (ns)
    5.8
  • Typical Turn-Off Delay Time (ns)
    18.4
  • Typical Turn-On Delay Time (ns)
    6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Gate Threshold Voltage (V)
    2.7
  • Mounting
    Surface Mount
  • Package Height
    1 mm
  • Package Width
    5.75 mm
  • Package Length
    4.9 mm
  • PCB changed
    8
  • Standard Package Name
    SON
  • Supplier Package
    VSONP EP
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources