Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
25
Maximum Gate-Source Voltage (V)
16
Maximum Gate Threshold Voltage (V)
1.9
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
100
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
1.15@10V
Typical Gate Charge @ Vgs (nC)
21@4.5V
Typical Gate to Drain Charge (nC)
5.2
Typical Gate to Source Charge (nC)
8.3
Typical Reverse Recovery Charge (nC)
72
Typical Input Capacitance @ Vds (pF)
3150@12.5V
Typical Reverse Transfer Capacitance @ Vds (pF)
175@12.5V
Minimum Gate Threshold Voltage (V)
1.2
Typical Output Capacitance (pF)
2530
Maximum Power Dissipation (mW)
3200
Typical Fall Time (ns)
12.7
Typical Rise Time (ns)
30
Typical Turn-Off Delay Time (ns)
20
Typical Turn-On Delay Time (ns)
16.6
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
0.99@10V|1.5@4.5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
3.2
Maximum Pulsed Drain Current @ TC=25°C (A)
200
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
50
Typical Diode Forward Voltage (V)
0.85
Typical Gate Plateau Voltage (V)
2.9
Typical Reverse Recovery Time (ns)
45
Maximum Diode Forward Voltage (V)
1
Typical Gate Threshold Voltage (V)
1.5
Maximum Gate Resistance (Ohm)
2.4
Maximum Positive Gate-Source Voltage (V)
16
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
261
Mounting
Surface Mount
Package Height
1(Max)
Package Width
6
Package Length
5
PCB changed
8
Standard Package Name
SON
Supplier Package
VSON-CLIP EP
Pin Count
8
Lead Shape
No Lead