| EU RoHS | Compliant |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Product Category | Power MOSFET |
| Material | Si |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Maximum Drain-Source Voltage (V) | 20 |
| Maximum Gate-Source Voltage (V) | 10 |
| Maximum Gate Threshold Voltage (V) | 1.35 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Continuous Drain Current (A) | 0.9 |
| Maximum Gate-Source Leakage Current (nA) | 25 |
| Maximum IDSS (uA) | 50 |
| Maximum Drain-Source Resistance (mOhm) | 1190@8V |
| Typical Gate Charge @ Vgs (nC) | 0.216@4.5V |
| Typical Gate to Drain Charge (nC) | 0.027 |
| Typical Gate to Source Charge (nC) | 0.077 |
| Typical Input Capacitance @ Vds (pF) | 8.1@10V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 0.13@10V |
| Minimum Gate Threshold Voltage (V) | 0.85 |
| Typical Output Capacitance (pF) | 5.9 |
| Maximum Power Dissipation (mW) | 1400 |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 1 |
| Typical Turn-Off Delay Time (ns) | 7 |
| Typical Turn-On Delay Time (ns) | 3 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Packaging | Tape and Reel |
| Typical Drain-Source Resistance @ 25°C (mOhm) | 2220@2.5V|1170@4.5V|990@8V |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.4 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 1.6 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 255 |
| Typical Diode Forward Voltage (V) | 0.85 |
| Typical Gate Plateau Voltage (V) | 2 |
| Maximum Diode Forward Voltage (V) | 1 |
| Typical Gate Threshold Voltage (V) | 1.1 |
| Maximum Positive Gate-Source Voltage (V) | 10 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 0.9 |
| Mounting | Surface Mount |
| Package Height | 0.36(Max) |
| Package Width | 0.73(Max) |
| Package Length | 0.64(Max) |
| PCB changed | 3 |
| Supplier Package | PicoStar |
| Pin Count | 3 |
