Product Overview and Breakdown of Wolfspeed’s 650 V Discrete Silicon Carbide MOSFETs
Wolfspeed products set the standard for performance, ruggedness, and ease of design-in. Our engineers leverage 10 trillion hours of experience to help you develop renewable energy solutions that meet emerging efficiency standards and power your success in the marketplace. Wolfspeed extends its Silicon Carbide (SiC) technology leadership with their 3rd-Generation 650 V MOSFETs; enabling smaller, lighter, and highly efficient power conversion in an even wider range of power systems.
Applications
The C3M0045065K Silicon Carbide MOSFET is ideally suited for residential solar applications. It can reduce IGBT-based system losses by up to 40% when in PV based ESS systems 8-15 kW for buck boost battery charge/discharge. C3M0045065K can also be used as the MPPT boost switch.
Application Images
Micro and single-phase solar inverters are an integral part of the residential solar system. Using Wolfspeed Silicon Carbide MOSFETs in the residential solar inverter creates increased power density and lower switching losses. For example, by replacing traditional silicon MOSFETs with Wolfspeed Silicon Carbide in a 7 kW residential inverter, designers can achieve 0.4% higher efficiency, a significant increase in power density (3 kW/L vs. 2.5 kW/L) and an impressive 48 kHz switching frequency, a full 32 kHz higher than using silicon MOSFETs.
Wolfspeed SiC in residential solar systems enables smaller, more efficient, and power dense energy systems that make renewable energy more reliable and affordable than ever before.
Features:
- • C3MTM SiC MOSFET technology
- • Optimized package with separate driver source pin
- • 8 mm of creepage distance between drain and source
- • High blocking voltage with low on-resistance
- • High-speed switching with low capacitances
- • Fast intrinsic diode with low reverse recovery (Qrr)
- • Halogen free, RoHS compliant
Benefits:
- • Reduce switching losses and minimize gate ringing
- • Higher system efficiency
- • Reduce cooling requirements
- • Increase power density
- • Increase system switching frequency
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Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
650
Maximum Gate-Source Voltage (V)
19
Maximum Gate Threshold Voltage (V)
3.6
Maximum Continuous Drain Current (A)
49
Maximum Gate-Source Leakage Current (nA)
250
Maximum IDSS (uA)
50
Maximum Drain-Source Resistance (mOhm)
60@15V
Typical Gate Charge @ Vgs (nC)
63@15V
Typical Input Capacitance @ Vds (pF)
1621@600V
Maximum Power Dissipation (mW)
176000
Typical Fall Time (ns)
6
Typical Rise Time (ns)
12
Typical Turn-Off Delay Time (ns)
18
Typical Turn-On Delay Time (ns)
9
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Industrial
Packaging
Tube
Mounting
Through Hole
Package Height
23.63(Max)
Package Width
5.21(Max)
Package Length
16.13(Max)
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4