Product Overview and Breakdown of Wolfspeed, INC’s 1200 V Discrete Silicon Carbide MOSFET
The C3M0040120K is Wolfspeed’s key Silicon Carbide switch for 3-phase solar and energy storage systems in commercial and industrial applications and is ideally suited for systems 25-30 kW.
Based on third generation technology, Wolfspeed SiC MOSFETS are optimized for use in high power applications. Their wide variety of on-resistances and package options enables you to select a part that matches your industrial or commercial application. Ideal for wide output range applications such as EV chargers or energy storage systems, Wolfspeed Silicon Carbide MOSFETs are the gold-standard for solar energy systems and allow for increased efficiency and power density, and simpler circuit topologies that reduce overall cost and size.
Wolfspeed engineers leverage 35+ years of vertical integration and 10 trillion hours of experience to help you develop renewable energy solutions that meet emerging efficiency standards and power your success in the marketplace.
Application Images
Pairing Wolfspeed’s C3M0040120K and C4D30120D can reduce total system cost by up to 30% while also enabling improved switching frequency, efficiency and power density.
Wolfspeed SiC devices enable lighter, smaller, and more efficient solar inverters. Compared to Silicon, SiC devices save 500 watts for every second in operation.
Using Wolfspeed Silicon Carbide MOSFETS and Schottky diodes in MPPT boost designs is a cost-effective way to maximize performance and get the most power out of your solar energy system. Wolfspeed’s 60 kW Interleaved Boost Converter reference design demonstrates Wolfspeed’s C3M™ Silicon Carbide MOSFETs in a 4-phase interleaved boost converter.
Features & Benefits
- • Extremely fast switching, ultra-low switching losses, and stable conduction losses over temperature assure significant improvement of system efficiency, power density and overall BOM cost versus silicon MOSFET and IGBT incumbents.
- • Fast, rugged intrinsic body diode means there is no need for an external diode.
- • Wide range of product options including through hole and surface mount with a kelvin source pin for optimized switching speed and efficiency.
Features:
- • 3rd generation SiC MOSFET technology
- • Optimized package with separate driver source pin
- • 1200 V VDS to support 400-1000 V panel, internal 700-1000 V bus, 380-400 VAC out and batteries up to 800 V
- • ID = 48 A @ 100˚C fit for 25 kW and ideal for 30 kW in a well-designed system
- • 8mm of creepage distance between drain and source
- • High blocking voltage with low on-resistance
- • High-speed switching with low capacitances
- • Fast intrinsic diode with low reverse recovery (Qrr)
- • Halogen free, RoHS compliant
- • Easier to Drive (+15 V gate drive)
Benefits:
- • Reduce switching losses and minimize gate ringing
- • Higher system efficiency
- • High temperature operation (Tj= 175 C) reduces cooling requirements
- • Increased power density
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Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.95
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Material
SiC
Configuration
Single Dual Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
1200
Maximum Gate-Source Voltage (V)
19
Maximum Gate Threshold Voltage (V)
3.6
Operating Junction Temperature (°C)
-40 to 175
Maximum Continuous Drain Current (A)
66
Maximum Gate-Source Leakage Current (nA)
250
Maximum IDSS (uA)
50
Maximum Drain-Source Resistance (mOhm)
53.5@15V
Typical Gate Charge @ Vgs (nC)
99@15V
Typical Gate to Drain Charge (nC)
28
Typical Gate to Source Charge (nC)
34
Typical Reverse Recovery Charge (nC)
850
Typical Input Capacitance @ Vds (pF)
2900@1000V
Typical Reverse Transfer Capacitance @ Vds (pF)
5@1000V
Minimum Gate Threshold Voltage (V)
1.8
Typical Output Capacitance (pF)
103
Maximum Power Dissipation (mW)
326000
Typical Fall Time (ns)
9
Typical Rise Time (ns)
17
Typical Turn-Off Delay Time (ns)
23
Typical Turn-On Delay Time (ns)
13
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
175
Supplier Temperature Grade
Industrial
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
40@15V
Maximum Pulsed Drain Current @ TC=25°C (A)
223
Typical Diode Forward Voltage (V)
5.5
Typical Gate Plateau Voltage (V)
7
Typical Reverse Recovery Time (ns)
17
Typical Gate Threshold Voltage (V)
2.7
Maximum Positive Gate-Source Voltage (V)
19
Mounting
Through Hole
Package Height
23.47
Package Width
5.02
Package Length
15.94
PCB changed
4
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
4
Lead Shape
Through Hole