Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
20
Maximum Gate Threshold Voltage (V)
3.8
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
11
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
9.7@10V
Typical Gate Charge @ Vgs (nC)
22@10V
Typical Gate Charge @ 10V (nC)
22
Typical Gate to Drain Charge (nC)
5
Typical Gate to Source Charge (nC)
7
Typical Reverse Recovery Charge (nC)
60
Typical Switch Charge (nC)
7
Typical Input Capacitance @ Vds (pF)
1600@50V
Typical Reverse Transfer Capacitance @ Vds (pF)
12@50V
Minimum Gate Threshold Voltage (V)
2.2
Typical Output Capacitance (pF)
250
Maximum Power Dissipation (mW)
2100
Typical Fall Time (ns)
5
Typical Rise Time (ns)
5
Typical Turn-Off Delay Time (ns)
21
Typical Turn-On Delay Time (ns)
11
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
8.3@10V|10.3@6V
Maximum Power Dissipation on PCB @ TC=25°C (W)
2.1
Maximum Pulsed Drain Current @ TC=25°C (A)
248
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
60
Typical Diode Forward Voltage (V)
0.9
Typical Gate Plateau Voltage (V)
4.6
Typical Reverse Recovery Time (ns)
43
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
3
Maximum Gate Resistance (Ohm)
1.8
Maximum Positive Gate-Source Voltage (V)
20
Maximum Continuous Drain Current on PCB @ TC=25°C (A)
11
Mounting
Surface Mount
Package Height
1
Package Width
3.3
Package Length
3.3
PCB changed
8
Standard Package Name
SON
Supplier Package
TSDSON EP
Pin Count
8
Lead Shape
No Lead