Infineon Technologies AGBSP320SH6327XTSA1MOSFETs
Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Obsolete | |
| 8541.29.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| Small Signal | |
| Single Dual Drain | |
| Enhancement | |
| N | |
| 1 | |
| 60 | |
| ±20 | |
| 4 | |
| 2.9 | |
| 100 | |
| 1 | |
| 120@10V | |
| 9.7@10V | |
| 9.7 | |
| 275@25V | |
| 1800 | |
| 35 | |
| 25 | |
| 25 | |
| 11 | |
| -55 | |
| 150 | |
| Automotive | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.6 |
| Package Width | 3.5 |
| Package Length | 6.5 |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| 4 | |
| Lead Shape | Gull-wing |
If you need to either amplify or switch between signals in your design, then Infineon Technologies' BSP320SH6327XTSA1 power MOSFET is for you. Its maximum power dissipation is 1800 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This device is made with sipmos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode.
| EDA / CAD Models |
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