MOSFETs
BSO615NGXUMA1
Trans MOSFET N-CH 60V 2.6A 8-Pin DSO T/R Automotive AEC-Q101
Infineon Technologies AGProduct Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.95
Automotive
Yes
PPAP
Unknown
Category
Small Signal
Configuration
Dual Dual Drain
Process Technology
SIPMOS
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
2.6
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
150@4.5V
Typical Gate Charge @ Vgs (nC)
14@10V
Typical Gate Charge @ 10V (nC)
14
Typical Reverse Recovery Charge (nC)
100
Typical Input Capacitance @ Vds (pF)
300@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
50@25V
Minimum Gate Threshold Voltage (V)
1.2
Typical Output Capacitance (pF)
90
Maximum Power Dissipation (mW)
2000
Typical Fall Time (ns)
15
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
20
Typical Turn-On Delay Time (ns)
12
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Automotive
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
120@4.5V
Maximum Positive Gate-Source Voltage (V)
20
Maximum Pulsed Drain Current @ TC=25°C (A)
10.4
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
62.5
Typical Diode Forward Voltage (V)
0.95
Typical Gate Plateau Voltage (V)
3.8
Typical Reverse Recovery Time (ns)
50
Maximum Diode Forward Voltage (V)
1.2
Typical Gate Threshold Voltage (V)
1.6
Mounting
Surface Mount
Package Height
1.45
Package Width
4
Package Length
5
PCB changed
8
Standard Package Name
SO
Supplier Package
DSO
Pin Count
8
Lead Shape
Gull-wing