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BSC0702LSATMA1|INFINEON|simage
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MOSFETs

BSC0702LSATMA1

Trans MOSFET N-CH 60V 23A 8-Pin TDSON EP T/R

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    20
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    23
  • Maximum Drain-Source Resistance (mOhm)
    2.7@10V
  • Typical Gate Charge @ Vgs (nC)
    24@4.5V
  • Typical Input Capacitance @ Vds (pF)
    3300@30V
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    5.4
  • Typical Rise Time (ns)
    4.8
  • Typical Turn-Off Delay Time (ns)
    25
  • Typical Turn-On Delay Time (ns)
    7.7
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.2(Max) mm
  • Package Width
    6.1(Max) mm
  • Package Length
    5.35(Max) mm
  • PCB changed
    8
  • Standard Package Name
    SON
  • Supplier Package
    TDSON EP
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources