RF FETs

BLF9G38LS-90PJ

Trans RF MOSFET N-CH 65V 5-Pin CDFM T/R

Ampleon

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  3A001.b.3.a.4

• Part Status

  Obsolete-Unconfirmed

• HTS

  8541.29.00.55

• Configuration

  Dual Common Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Mode of Operation

  1-Carrier W-CDMA

• Process Technology

  0.14um

• Maximum Drain-Source Voltage (V)

  65

• Maximum Gate-Source Voltage (V)

  13

• Maximum VSWR

  10

• Maximum Gate-Source Leakage Current (nA)

  140

• Maximum IDSS (uA)

  1.4

• Maximum Drain-Source Resistance (mOhm)

  449@3.75V

• Typical Forward Transconductance (S)

  0.45

• Maximum Output Power (W)

  15.1(Typ)

• Typical Power Gain (dB)

  15

• Maximum Frequency (MHz)

  3600

• Minimum Frequency (MHz)

  3400

• Typical Drain Efficiency (%)

  28

• Minimum Operating Temperature (°C)

  -65

• Maximum Operating Temperature (°C)

  225

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  4.75(Max)

• Package Width

  9.91(Max)

• Package Length

  20.7(Max)

• PCB changed

  5

• Supplier Package

  CDFM

• Pin Count

  5