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BLA6G1011200R112|AMPLEON|simage
BLA6G1011200R112|AMPLEON|limage
MOSFET RF

BLA6G1011-200R,112

Trans RF MOSFET N-CH 65V 49A 3-Pin SOT-502A

Ampleon
Datasheets 

Product Technical Specifications
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Active-Unconfirmed
  • Codice HTS
    8541.29.00.75
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Mode of Operation
    Pulsed RF
  • Process Technology
    0.14um
  • Maximum Drain-Source Voltage (V)
    65
  • Maximum Gate-Source Voltage (V)
    13
  • Maximum VSWR
    10
  • Maximum Continuous Drain Current (A)
    49
  • Maximum Drain-Source Resistance (mOhm)
    93@6.15V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    3@28V
  • Typical Forward Transconductance (S)
    18
  • Maximum Output Power (W)
    200(Min)
  • Typical Power Gain (dB)
    20
  • Maximum Frequency (MHz)
    1090
  • Minimum Frequency (MHz)
    1030
  • Typical Fall Time (ns)
    6
  • Typical Rise Time (ns)
    10
  • Typical Drain Efficiency (%)
    65
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    225
  • Packaging
    Bulk
  • Mounting
    Screw
  • Package Height
    4.72(Max)
  • Package Width
    9.91(Max)
  • Package Length
    34.16(Max)
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-502A
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources