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BFU768F115|NXP|simage
BFU768F115|NXP|limage
RF BJT

BFU768F,115

Trans RF BJT NPN 2.8V 0.07A 220mW 4-Pin DFP T/R

NXP Semiconductors
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    LTB
  • HTS
    8541.21.00.75
  • SVHC
    Yes
  • Automotive
    No
  • PPAP
    No
  • Type
    NPN
  • Material
    Si
  • Configuration
    Single Dual Emitter
  • Number of Elements per Chip
    1
  • Maximum Collector-Base Voltage (V)
    10
  • Maximum Collector-Emitter Voltage (V)
    2.8
  • Maximum Collector-Emitter Voltage Range (V)
    <20
  • Maximum Base-Emitter Voltage (V)
    1
  • Maximum DC Collector Current (A)
    0.07
  • Maximum DC Collector Current Range (A)
    0.06 to 0.12
  • Maximum Collector Cut-Off Current (nA)
    100
  • Minimum DC Current Gain
    155@10mA@2V
  • Minimum DC Current Gain Range
    120 to 200
  • Maximum Power Dissipation (mW)
    220
  • Maximum Power 1dB Compression (dBm)
    5.9(Typ)
  • Typical Power Gain (dB)
    13.1
  • Typical 3rd Order Intercept Point (dBm)
    18.8
  • Maximum Noise Figure (dB)
    1.2(Typ)
  • Maximum Turn-On Time (ns)
    300(Typ)
  • Maximum Turn-Off Time (ns)
    40(Typ)
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.75(Max)
  • Package Width
    1.35(Max)
  • Package Length
    2.2(Max)
  • PCB changed
    4
  • Supplier Package
    DFP
  • Pin Count
    4
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources